PART |
Description |
Maker |
2N1021A 2N457A 2N1166 2N1022A 2N1552 2N1554 |
germanium power transistors Bipolar Junction Transistor SILICON PNP TRANSISTOR
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New Jersey Semi-Conductor Products, Inc. New Jersey Semiconductors New Jersey Semi-Conductor P... New Jersey Semi-Conduct...
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S13003A-D |
Bipolar Junction Transistor
|
Shenzhen Jingdao Electr...
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SD965 |
Bipolar Junction Transistor
|
Sinyork
|
S13003ADL |
Bipolar Junction Transistor
|
Shenzhen Jingdao Electr...
|
JANSM2N3439 JANSM2N3439L |
BJT( BiPolar Junction Transistor)
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Microsemi
|
2N2905ALE3 JANSM2N2904AL |
PNP Transistor BJT( BiPolar Junction Transistor)
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Microsemi
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MMBT2131T3 MMBT2131T1 ON2108 |
GENERAL PURPOSE TRANSISTORS From old datasheet system PNP Bipolar Junction Transistor
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ONSEMI[ON Semiconductor]
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30KW258A 30KW168 30KW168A 30KW216 30KW240 30KW240A |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
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MDE Semiconductor
|
CT90AM-18 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V INSULATED GATE BIPOLAR TRANSISTOR
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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
2SA1585S 2SB1424 A5800357 2SB1424Q 2SA1585SR |
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 5A I(C) | SPAK 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) Transistors > Small Signal Bipolar Transistors(up to 0.6W) Low Vce(sat) Transistor (-20V, -3A) From old datasheet system Low VCE(sat) Transistor(低VCE(sat)晶体 Low Vce(sat) Transistor (-20V/ -3A)
|
ROHM[Rohm] Rohm CO.,LTD.
|
AT-31011 AT-31011-BLK AT-31011-TR1 AT-31033 AT-310 |
TERM BLOCK HDR 5.08MM 3POS PCB Low Current/ High Performance NPN Silicon Bipolar Transistor Low Current High Performance NPN Silicon Bipolar Transistor Low Current, High Performance NPN Silicon Bipolar Transistor
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HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
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